Samsung was the leader in DRAM development in 2013, having introduced 6Gb LPDDR3 DRAM chips to the market, which were implemented into the Galaxy Note 3 smartphone as 3GB mobile RAM modules. The manufacturer is now continuing its innovation as it introduces its latest chip, the industry’s first 8Gb LPDDR4 Mobile DRAM chip.
The 8Gb low-power double data rate 4 (LPDDR4) DRAM chip will be used to make a 4GB mobile RAM module. Using a 20-nanometer , which packs the memory components closers together for higher memory capacity, Samsung was able to fit 8 Gigabits (Gb) of memory (which equals 1 Gigabyte or GB) onto a single silicon die.
Four of 8Gb chips are combined to create a 4GB LPDDR4 module manufacturing process.
Samsung’s new RAM chips not only provide a memory boost but also deliver performance enhancements and improved energy efficiency. Using the new Low Voltage Swing Terminated Logic (LVSTL) I/O interface, which is now the standard specification for LPDDR4 DRAM functionality, these new LPDDR4 chips have an increased data transfer rate of 3,200 megabits per second (Mbps) per pin, nearly twice the rate of the current 20nm-class LPDDR3 DRAM chips.
Additionally, the LPDDR4 DRAM chips provide 50 percent higher performance than the fastest LPDDR3 memory and approximately 40 percent less energy at 1.1 volts.
